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1 ds04-27200-5e fujitsu semiconductor data sheet assp pulse-width-modulation control circuit mb3759 pulse-width-modulation control circuit push-pull/single-ended output mode the fujitsu mb3759 is complete pulse-width modulation control system on a single mono- lithic chip. the mb3759 consists of an internal 5.00v reference, two or-connected ampli- ?rs, externally timed (or synchronized) oscillator and control ramp generator. the mb3759 provides for either push-pull or single-ended mode of operation with external control of dead-band. the two npn output transistors have uncommitted emitters and collectors that can be used to either sink or source up to 200ma each. complete pulse-width-modulation system with power control circui either push-pull or single-ended mode of operation internal circuitry prohibits double pulse at either output on-chip voltage reference (5v) uncommitted output drivers master or slave oscillator control dual error ampli?rs under voltage lockout function dead time adjustable package: 16-pin plastic dip package (suf? -p) 16-pin ceramic dip package (suf? -z) 16-pin plastic fpt package (suf? -pf) absolute maximum ratings (see note) parameter symbol rating unit power supply voltage v cc 41 v collector output voltage v ce 41 v collector output current i ce 250 ma ampli?r input voltage v in v cc +0.3 v power dissipation plastic dip p d 1000 (ta 25 c) mw ceramic dip 800 (ta 60 c) plastic fpt 620 (ta 25 c)* operating tempera- ture dip ta -20 to 85 c fpt -20 to 75 storage temperature tstg -55 to 125 c * pft package is mountedon the epoxy board. (4cm x 4cm x 0.15cm) note: permanent device damage may occur if the above absolute maximum ratings are exceeded. functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. exposure to absolute maximum rating conditions for extended periods may affect device reliability. plastic package fpt-16p-m06 plastic package dip-16p-m04 ceramic package dip-16c-c01 +in2 -in2 v r o.c v cc c 2 e 2 e 1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 osc tr1 tr2 + - + - a1 a2 +in1 -in1 f.b. d.t c t r t gnd c 1 this device contains circuitry to protect the inputs against damage due to high static voltages or electric ?lds. however, it is advised that normal precautions be taken to avoid appli- cation of any voltage higher than maximum rated voltages to this high impedance circuit. pin assignment top view
2 mb3759 fig. 1 - mb3759 block diagram 6 5 osc 4 1 2 16 15 3 0.2v dead time control feed back error amp2 pwm comparator t q q __ 13 pulse steering f/f 8 9 11 10 12 14 7 v cc v ref gnd c 1 e 1 c 2 e 2 reference regulator output control r t c t error amp1 +in -in +in -in + - a 1 + - a 2
3 mb3759 n recommended operating conditions n electrical characteristics reference section parameter symbol dip-package fpt-package unit min typ max min typ max power supply voltage v cc 7 15 32 7 15 24 v collector output voltage v ce - - 40 - - 40 v collector output current i ce 5 100 200 5 50 100 ma amplifier input voltage v in -0.3 0 to v ref v cc -2 -0.3 0 to v ref v cc -2 v fb sink current i sink - - 0.3 - - 0.3 ma fb source current i source - - 2 - - 2 ma reference section output current i ref - 5 10 - 3 10 ma timing resistor r t 1.8 30 500 1.8 30 500 k w timing capacitor c t 470 1000 10 6 470 1000 10 6 pf oscillator frequency f osc 1 40 300 1 40 300 khz operating temperature t a -20 25 85 -20 25 75 c note: these recommended operating conditions are based on the standard condition. when used at higher supply voltage, careful consideration for the ambient temperature, power consump- tion and so on is necessary. (t a =25 c, v cc =15v) parameter symbol condition value unit min typ max output voltage d v ref i o =1ma 4.75 5.0 5.25 v input regulation d v rin 7v v cc 40v, t a =25 c - 2 25 mv load regulation d v rld 1ma i o 10ma, t a =25 c - -1 -15 mv temperature stability d vr/ d t -20 c t a 85 c - 200 750 m v/ c short circuit output current i sc 15 40 - ma reference lockout voltage - 4.3 - v reference hysteresis voltage - 0.3 - v
4 mb3759 n electrical characteristics (continued) oscillator section dead-time control section error ampli?r section parameter symbol condition value unit min typ max oscillator frequency f osc r t =30k w , c t =1000pf 36 40 44 khz standard deviation of frequency r t =30k w , c t =1000pf - 3 - % frequency change with voltage 7v v cc 40v, t a =25 c - 0.1 - % frequency change with temper- ature d f osc / d t -20 c t a 85 c - 0.01 0.03 %/ c input bias current i d 0 v i 5.25v - -2 -10 m a maximum duty cycle (each out- put) v i =0 40 45 - % input threshold voltage 0% duty cycle v do - 3.0 3.3 v max. duty cycle v dm 0 - - v input offset voltage v io v o (pin3) = 2.5v - 2 10 mv input offset current i io v o (pin3) = 2.5v - 25 250 na input bias current i i v o (pin3) = 2.5v - -0.2 -1.0 m a common-mode input voltage v cm 7v v cc 40v -0.3 - v cc -2 v open-loop voltage ampli?ation a v 0.5 v o 3.5v 70 95 - db unity-gain bandwidth bw a v = 1 - 800 - khz common-mode rejection ratio cmr v cc = 40v 65 80 - db output sink current (3pin) i sink -5v v id -15mv, v o =0.7v 0.3 0.7 - ma output source current (3pin) i source 15mv v id 5v, v o =3.5v -2 -10 - ma
5 mb3759 n electrical characteristics (continued) output section pwm comparator section total device switching characteristics parameter symbol condition value unit min typ max collector leakage current i co v ce =40v, v cc =40v - - 100 m a emitter leakage current i eo v cc =v c =40v, v e =0v - - -100 m a collector emitter saturation voltage emitter grounded v satc v e =0, i c =200ma - 1.1 1.3 v emitter follower v sate v c =15v, i e =-200ma - 1.5 2.5 v output control input current i opc v i =v ref - 1.3 3.5 ma input threshold voltage v th 0% duty - 4 4.5 v input sink current (3pin) i sink v o(pin3) =0.7v 0.3 0.7 - ma power supply current i cc v4=2v, see fig-2 - 8 - ma stand-by current i ccq v (pin6) =v ref , i/o open - 7 12 ma rise time emitter grounded t r r l =68 w - 100 200 ns fall time t f r l =68 w - 25 100 na rise time emitter follower t r r l =68 w - 100 200 ns fall time t f r l =68 w - 40 100 ns
6 mb3759 oscillation frequency f osc = 1.2 / (r t c t )r t :k w c t : m f f osc : khz function table input (output control) output state gnd single-ended or parallel output v ref push-pull fig. 2 - test circuit v cc v cc =15v c 1 e 1 c 2 ref gnd o.c. d.t. comp r t c t + - + - 30k w 1000pf 50k v d v c output1 output2 150 w /2w 150 w /2w test input a a e 2 fig. 3 - operating timing on on on on on on on output2 output1 voltage at c t 3.0v v d v c 0v . .
7 mb3759 oscillator frequencyf osc (h z ) fig. 7 - duty ratio vs. dead time control voltage fig. 6 - oscillator frequency vs. r t , c t 70 c fig. 9 - output voltage vs. output current (feed back terminal) fig. 8 - open loop voltage amplification vs. frequency i ol i oh 0 c fig. 4 - reference voltage vs. power supply voltage 0 10203040 6 5 4 3 2 1 0 power supply voltage v cc (v) 2k 5k 10k 20k 100k200k500k 1m 500k 200k 100k 50k 20k 1k timing resistance r t ( w ) 10 100 1k 10k 100k 1m 100 90 70 50 30 20 0 frequency f (hz) -25 0 25 50 100 10 0 -10 -20 -30 fig. 5 - reference voltage vs. temperature temperature t a ( c) 0123 0 10 20 30 40 50 dead time control voltage v d (v) 0 0.5 1.0 1.5 0.8 0.6 0.4 0.2 0 output current i ol , i oh (ma) 5 0 -5 75 80 60 40 10 0 5 10 15 10k 5k 2k v ref d v ref i o =1ma v cc =15v i o =1ma v cc =15v c t =470pf 1000pf 0.01 m f 0.1 m f v cc =15v c t =1000pf r t =30k w 25 c ta=0 c v cc =15v d v o =3v 0 c 25 c v oh 70 c 70 c 25 c v ol 5 4 3 2 1 v cc =15v reference voltage v ref (v) reference voltage change d v ref (mv) reference voltage change d v ref (mv) duty radio t on /t (%) open loop voltage amplifaction a v (db) low-level output voltage v ol (v) high-level output voltage v oh (v) n typical electrical curves
8 mb3759 fig. 10 - collector saturation voltage vs. collector output current 0 50 100 150 200 1.2 1.0 0.8 0.6 0.4 collector output current i c (ma) 0 20 40 80 100 1000 800 600 400 200 0 fig. 15 - available power dissipation vs. temperature temperature t a ( c) 0 50 100 150 200 1.8 1.6 1.4 1.2 1.0 fig. 11 - emitter saturation voltage vs. emitter output current emitter output current i e (ma) 0 10203040 10 7.5 5 2.5 0 fig. 13 - power supply current vs. power supply voltage power supply voltage v cc (v) 60 01020 40 1000 800 600 400 200 0 30 fig. 14 - power dissipation vs. power supply voltage power supply voltage v cc (v) 01 34 6 6 5 3 2 1 0 fig. 12 - output voltage vs. reference voltage reference voltage v ref (v) 4 25 v cc =15v t a =0 c 70 c 25 c v cc =15v t a =0 c 25 c 70 c i ccq c p pf t a =25 c (200.10) (0.0) (100.0) (100.5) (200.5) 5v 400 w v out 8 i cc note: i o is collector output current at emitter grounded mode. note: c (ceramic dip) p (plastic dip) pf (plastic fpt) (100.10) collector saturationvoltage v satc (v) emitter saturation voltage v sate (v) output voltage v out (v) power supply current i cc ,i ccq (ma) power dissipation p d (mw) power dissipation p d (mw) (i o , i r ) (ma) n typical electrical curves (continued)
9 mb3759 n typical application fig. 16 - chopper 15v 12 9 8 11 10 6 5 13 3 2 1 14 15 16 4 7 2200 m f 1mh 24v 2.5a 50 w 2k w 10k w 10k w 100k w 0.22 m f 2.2k w 5.6k w 47k w 10 m f + 16k w 5.1k w 5.1k w 5k w 300 w 2200pf 20k w + 1 w ac 100v + + + 0.1 w
10 mb3759 n typical application (continued) fig. 17 - inverter 15v v cc e 1 c 2 c 2 e 2 r t c t o.c f.b - + ref - + d.t gnd 10k w 10k w 100k w 0.22 m f 2.2k w 5.6k w 47k w 10 m f 16k w 5.1k w 5.1k w 5k w 300 w 2200pf 20k w ac 100v + + + b ref a b a + 24v 2.5a 2200 m f 0.1 w 2sc2427 2sc2427 100 w 100 w 33 w 33 w + a a
11 mb3759 n package dimensions +.012 C0 +.008 C.012 C0 +.012 +0.30 C0 C0 +0.30 +0.20 C0.30 0.99 3.00(.118)min 4.36(.172)max (.244.010) 6.200.25 typ 7.62(.300) .060 .770 .039 index-1 max 1.27(.050) 1.52 0.250.05 (.010.002) 0.51(.020)min 15max 19.55 typ 2.54(.100) index-2 (.018.003) 0.460.08 1994 fujitsu limited d16033s-2c-3 c 16 pin, plastic dip (dip-16p-m04) dimensions in mm(inches).
12 mb3759 n package dimensions (continued) +0.40 C0.20 +.016 C.008 +0.05 C0.02 +.002 C.001 +0.25 C0.20 +.010 C.008 0.68(.027)max 0.18(.007)max 0.15(.006) 0.20(.008) details of "b" part "b" 8.89(.350)ref 1.27(.050) typ index 6.80 .268 0.15 .006 10.15 .400 (.307.016) (.209.012) (.018.004) (stand off) (.020.008) 0.500.20 5.300.30 7.800.40 0.05(.002)min 2.25(.089)max 0.450.10 details of "a" part 0.20(.008) 0.40(.016) 0.18(.007)max 0.68(.027)max "a" m ?0.13(.005) 0.10(.004) 1994 fujitsu limited f16015s-2c-4 c 16 pin, plastic sop (fpt-16p-m06) dimensions in mm(inches).
13 mb3759 n package dimensions (continued) +.002 C.004 C.006 +.028 +.004 C.002 C.006 +.014 +.012 C.004 C.003 +.005 C0.10 +0.30 +0.36 C0.15 C0.05 +0.10 +0.13 C0.08 C0.10 +0.05 +0.71 C0.15 (.134.014) 3.400.36 5.08(.200)max .060 .760 typ 7.62(.300) .010 .311 .248 .018 ref 6.30 0.810.30 (.032.012) 17.78(.700)ref 0.81(.032) typ 7.90 0.25 15 0.46 r0.64(.025) max 1.27(.050) 1.52 0 19.30 (.100.010) 2.540.25 1994 fujitsu limited d16011sc-2-3 c 16 pin, ceramic dip (dip-16c-c01) dimensions in mm(inches).
24 fujitsu limited for further information please contact: japan fujitsu limited corporate global business support division electronic devices kawasaki plant, 4-1-1, kamikodanaka nakahara-ku, kawasaki-shi kanagawa 211-88, japan tel: (044) 754-3763 fax: (044) 754-3329 north and south america fujitsu microelectronics, inc. semiconductor division 3545 north first street san jose, ca 95134-1804, u.s.a. tel: (408) 922-9000 fax: (408) 432-9044/9045 europe fujitsu mikroelektronik gmbh am siebenstein 6-10 63303 dreieich-buchschlag germany tel: (06103) 690-0 fax: (06103) 690-122 asia paci? fujitsu microelectronics asia pte. limited #05-08, 151 lorong chuan new tech park singapore 556741 tel: (65) 281-0770 fax: (65) 281-0220 f9703 fujitsu limited printed in japan all rights reserved. the contents of this document are subject to change without notice. customers are advised to consult with fujitsu sales representatives before ordering. the information and circuit diagrams in this document presented as examples of semiconductor device applications, and are not intended to be incorporated in devices for actual use. also, fujitsu is unable to assume responsibility for infringement of any patent rights or other rights of third parties arising from the use of this information or circuit diagrams. fujitsu semiconductor devices are intended for use in standard applications (computers, office automation and other office equipment, industrial, communications, and measurement equipment, personal or household devices, etc.). caution: customers considering the use of our products in special applications where failure or abnormal operation may directly affect human lives or cause physical injury or property damage, or where extremely high levels of reliability are demanded (such as aerospace systems, atomic energy controls, sea floor repeaters, vehicle operating controls, medical devices for life support, etc.) are requested to consult with fujitsu sales representatives before such use. the company will not be responsible for damages arising from such use without prior approval. any semiconductor devices have inherently a certain rate of failure. you must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document represent goods or technologies subject to certain restrictions on export under the foreign exchange and foreign trade control law of japan, the prior authorization by japanese government should be required for export of those products from japan.

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